SBIR/STTR Research Award
STTR Phase II: Germyl Silanes - Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Phot
Award amount
$498,909Program and phase
STTR · Phase IIAward year
2008Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Voltaix, Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- NSF 05-557
- Topic code
- EL
Research abstract
This Small Business Technology Transfer Phase II project will demonstrate pilot scale manufacture of germyl silane precursors and their use to create prototype semiconductor devices and thin films under low temperature and selective growth processing conditions. The project addresses a critical need for precursors and processes that deposit such films under low temperature conditions with throughput rates that are significantly higher than those offered by existing processes. The potential market for devices made with these technologies is predicted to exceed several billion dollars per year and exhibit double-digit growth rates over the next five years. Ge-rich SiGe films will enable higher clock speeds in microprocessors, lower power consumption in cell phones, silicon-based photonics, and more efficient solar cells.
Technology keywords
Not reported