SBIR/STTR Research Award

STTR Phase II: Germyl Silanes - Enabling Precursors for Chemical Vapor Deposition of Advanced CMOS Substrates, CMOS-Integrated MEMS, and Nano-Scale Quantum-Dot Silicon Phot

Award identifier 799169e65f1f02163fcfa428cdaabdafb72ce87f10af17dad4840f98b90098c2Awarding agency National Science Foundation

Award amount

$498,909

Program and phase

STTR · Phase II

Award year

2008

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Voltaix, Inc
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
NSF 05-557
Topic code
EL

Research abstract

This Small Business Technology Transfer Phase II project will demonstrate pilot scale manufacture of germyl silane precursors and their use to create prototype semiconductor devices and thin films under low temperature and selective growth processing conditions. The project addresses a critical need for precursors and processes that deposit such films under low temperature conditions with throughput rates that are significantly higher than those offered by existing processes. The potential market for devices made with these technologies is predicted to exceed several billion dollars per year and exhibit double-digit growth rates over the next five years. Ge-rich SiGe films will enable higher clock speeds in microprocessors, lower power consumption in cell phones, silicon-based photonics, and more efficient solar cells.

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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