HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES

HIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIBLY GROW STOICHIOMETRIC FILMS FREE FROM EXCESS SILICON OR CARBON. SINGLE MOLECULE SOURCE REAGENTS, INTRODUCING EQUIVALENT AMOUNTS OF REACTIVE SILICON AND CARBON, ARE PROPOSED FOR MOCVD OF STOICHIOMETRIC BETA SILICON CARBIDE. IN PHASE I SOURCES WILL BE SYNTHEESIZED, THEIR DECOMPOSITION PATHWAYS STUDIED, AND THEIR USE FOR THE CVD OF BETA GROWTH CONDITIONS WILL BE OPTIMIZED AND THE FOCUS WILL SHIFT TOWARDS THE SYNTHESIS OF AN ULTRAHIGH PURITY, UNIMOLECULAR SOURCE AND THE GROWTH OF INTRINSIC BETA-SIC FOR DEVICE APPLICATIONS.