SBIR/STTR Research Award

Advanced Thermal Spreader for High Power Density Microelectronics

Award identifier ec48dd2ef85bd329a860c20d2e24388210de7cb78c73b958af7be366162bebf1Awarding agency Department of Defense · Missile Defense Agency

Award amount

$65,000

Program and phase

SBIR · Phase I

Award year

2001

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Allcomp Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
D55JVDSPY5K5
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Cu-Diamond composite is identified as a promising thermal spreader material. Cu-Diamond composite can be produced using conventional powder metallurgy processing technologies. Near-Net-Shape parts can also be produced. Diamond composite offers attractiveproperties with fewer limitations at more affordable price. With an estimated isotropic 600-1300 W/m.¿K thermal conductivity and a chip matching 6-10 ppm/¿K thermal expansion coefficient, Cu-Diamond spreader is perfect for high power densitymicroelectronic applications, e.g. laser diode assembly. Critical material and process related issues are identified and innovative solutions are proposed. Diamond selection criteria, new alloy development, and manufacturing process are examinedindividually. Special attentions are focused on maintaining diamond integrity during the processing and on near-net-shape fabrication. A product development team, consisting of material developer, material integrator, laser diode manufacturer, and systemintegrator has been assembled. In this proposed effort, we plan to fabricate up to 12 different prototype materials for evaluation and characterization. Thermal conductivity and expansion coefficient will be measured before and after thermal cycling. Atthe conclusion of the program, each member of the development team will offer an independent assessment on the overall technology and its market potential.An affordable high performance Cu-Diamond thermal spreader will be very beneficial for the next-generation high-power-density microelectronic packaging applications, e.g. laser diode assembly.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

62 SBIR/STTR records share this UEI (1999–2020). Reported award amounts total $22,355,305. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Aeronautics and Space Administration, Department of Energy

Agency intelligence

Department of Defense

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