Low Cost Low Light Level Solid State Sensors

It is the purpose of this proposal to develop a new device architecture for near infrared sensing that has two key components coplanarly connected: a high dark resistance photoconductive layer as the detector and an electroluminescent layer for the visual display. When properly biased, the change in resistivity of the photo-conductor as a result of incoming photons will induce a change in the bias voltage across the electroluminescent layer. The modulation of the induced voltage generates a visible image over the active area that is a replica of the scene under observation. The proposed near IR imager is monolithic in nature without using a silicon multiplexer for signal processing. The concept is simple, but perhaps the truly unique feature of this imager is that it is a direct viewing device and easily packaged as a light weight unit, and can be retrofitted to Gen III photocathode night vision goggles. It potentially could be low cost and conducive to mass production for both military and commercial applications. The near IR imager to be developed in this program can be dual-used for both military and civilian applications. It will be light weight and los cost for the field use where low light level sensing to improve security and other missions is required.