SBIR/STTR Research Award

IMPURITY CONCENTRATIONS ON GAAS(100)

Award identifier 29d12cdf8a8417eec217d4cc2d634452b59581038d056add041f70c2fb11f982Awarding agency Department of Defense · Defense Advanced Research Projects Agency

Award amount

$50,000

Program and phase

SBIR · Phase I

Award year

1986

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Award details

Awarding agency
Department of Defense
Branch
Defense Advanced Research Projects Agency
Recipient company
IONWERKS INC
Proposal award date
Not reported
Contract end date
Not reported
UEI
XFHSJJLN7ZQ7
Solicitation number
Not reported
Topic code
Not reported

Research abstract

DETERMINATION OF THE SURFACE STOICHIOMETRY OF SEMICONDUCTOR SURFACES DURING PROCESSING BY MBE OR CVD IS DESIREABLE. DIRECT RECOIL SPECTROSCOPY (DRS) MAY OVERCOME THE LIMITATIONS INHERENT IN CONVENTIONAL SURFACE ANALYSIS SO THAT ANALYSIS OF GAAS SURFACES SIMULTANEOUSLY FOR H, C, O, N, AL, SI, FE, ZN, GA, AND AS WILL BE POSSIBLE ON SUBSECOND TIME SCALES AT MODERATE PRESSURE (10(-2) TORR). AZIMUTHAL SCANS OF THE SINGLE CRYSTAL SUBSTRATE COUPLED WITH BLOCKING AND SHADOWING ANALYSIS WILL PROVIDE DOPANT AND IMPURITY SURFACE POSITION. DRS WILL BE USED AS A REAL TIME MONITOR OF AL DEPOSITION ON GAAS.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

65 SBIR/STTR records share this UEI (1986–2021). Reported award amounts total $17,405,049. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Health and Human Services, Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation

Agency intelligence

Department of Defense

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