Broadband SWIR photodetector arrays enabled by nanomaterial semiconductor inks

This Phase I SBIR seeks to advance the manufacturing of short-wave infrared (SWIR) sensor arrays by integrating nanomaterials capable of strong light absorption within silicon-based microelectronics. SWIR detectors are sensitive to wavelengths between 1 to 2 um and are critical across industries. Leveraging nanomaterial inks spun out of Argonne National Lab, the project aims to produce highperformance, low-cost SWIR sensors integrated into a scalable 12” silicon manufacturing processes. The core innovation lies in the application of tunable, direct band gap two-dimensional materials in the form of nanomaterial semiconductor inks. These inks can be annealed into solid films, exhibiting the desired optoelectronic properties for efficient light absorption across multiple optical bands. The project seeks to replace traditional, costly, and hazardous materials such as Indium Gallium Arsenide (InGaAs) and Lead Sulfide (PbS) quantum dots. The new approach will integrate seamlessly with 12” silicon wafers, >9x the amount of chips per run compared to 4” InGaAs wafers. The search is on for a SWIR equivalent to the ubiquitous silicon CMOS whose wide availability has put a visible light camera in the pockets of many people around the world. This project aims to create this solution for SWIR. Traditional applications of SWIR photodetectors focus on industrial, scientific, and defense sectors. However, there is a rapidly emerging interest in consumer applications (primarily smartphones) and industrial machine vision that will grow the market nearly 10x by 2028. SWIR unveils richness beyond visible spectra, but current detectors are expensive and require stringent thermal management in order to minimize noise. In turn, this increases power consumption and reduces the range of suitable operating environments. Iris Light aims to expand SWIR imaging beyond the constraints of existing epitaxial-based systems. Ultimately, the project’s success could unlock new functionalities for consumer electronics, improve machine vision, enchance quality control in semiconductor chip manufacturing, amd enable monitoring of plant health and water content in agricultural applications. This Phase I project aims to validate the technology by improving photodetector array chips between 1 to 2 um wavelengths, focusing on the spectral range, responsivity, dark current, and manufacturing scalability. Preliminary data has shown promising results, with Iris Light’s demonstration of initial photodevice performance enabled by drastic improvements in the quality of nanomaterial ink ‘films’ over the past years. Phase I will involve a series of technical milestones, including improving singlepixel performance at 1.55 and 2 um, reducing dark current, initial demonstration of multi-pixel deposition, and identifying existing commercial readout integrated circuit (ROIC) chips to interface with the nanomaterial detectors in Phase II. If successful, the innovation could lead to a 1000x increase in the production of SWIR imaging chips at a fraction of the cost of current methods, positioning the U.S. as a leader in advanced microelectronics manufacturing with integrated nanomaterials.