A Robust High Speed Switch for Pulsed Power Applications

Pulsed power applications such as high energy accelerators and colliders are pushing the requirements for semiconductor switches toward faster operation and higher voltages, currents, and power levels. Existing devices such as IGBTs which were developed for use in traction drives and converters cannot meet these ratings in a single device, and practical experience indicates that innovative methods for cascading multiple die are needed to maximize performance and reliability. To achieve this goal we will develop a robust, high speed switch based on an innovative packaging arrangement of an array of Super Gate Turn Off Thyristors (SGTO). We propose to use an innovative method for cascading a set of individual SGTO die to achieve the required electrical ratings. Our innovative method uses: (1) individual devices which are inherently tolerant to very high rates of changes of current and voltage; (2) a physical geometry which minimizes internal parasitic elements; and (3) a high heat transfer substrate to maximize cooling. Commercial Application and Other Benefit: We project the SGTO based module will require six devices at a parts cost of roughly $4K, whereas a comparable IGBT module will require 80 devices at a parts cost of $160K. With far fewer devices, the SGTO module will be much more reliable, and the SGTO devices are also inherently much more tolerant to high rates of change of current and voltage. With such clear benefits, this technology will find widespread commercial application to a range of pulsed power equipment, including pulse modulated accelerators and colliders, as well as equipment used for metal forming, sterilizers for foods and medicines, rock crushers, water purifiers, and directed energy weapons