Ultra Low Phase Noise GaAs MOSFETs

WideGap Technology (WiTech) proposes to develop a GaAs based MOSFET technology with Al(2)0(3) as the gate insulator and surface passivant. The wet oxide is formed by the steam oxidation of AlAs. During phase I we will focus on : Al(2)0(3)/GaAs interface state density reduction, investigate the electrical and thermal stability of Al(2)0(3), and develop the LDD MOSFET technology for low phase noise oscillators. On wafer measurements of phase noise at 4 GHz will be performed. In phase II, the development of hybrid oscillators in microwave fixtures based on the device technology developed in phase I will be pursued. This effort of WiTech leading to the development of GaAs LDD MOSFETs with Al(2)0(3) as the gate oxide can have far reaching consequences in producing low cost ultra low noise oscillators.