DEVELOPMENT OF SIGE HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) PRODUCTION TECHNOLOGY

THIS PROPOSAL ADDRESSES THE EPITAXIAL GROWTH OF SI/SIGE HBT DEVICES. THIS WILL BE ACCOMPLISHED USING AN ULTRAHIGH VACUUM EPITAXIAL GROWTH SYSTEM COMBINED WITH THE DEVELOPMENT OF AN ADVANCED, CARRIER GAS BASED, VAPOR TRANSPORT TECHNIQUE OPERATING IN THE 10(-3) - 10(-6) TORR RANGE. THE TECHNIQUE IS CALLED VAPOR TRANSPORT EPITAXY (VTE). GROUP IV MATERIALS SUCH AS SI/SIGE ARE OF PARTICULAR INTEREST, SINCE THEY PROMISE TO BE THE NEXT GENERATION IN HIGH SPEED SI BASED DEVICES. IN PHASE I, THE GROWTH AND MATERIALS CHARACTERISTICS OF SI/SIGE STRUCTURES WOULD BE DETERMINED. IN PHASE II DOPING TECHNIQUES WOULD BE ESTABLISHED AND FUNCTIONAL DEVICES WOULD BE FABRICATED AND CHARACTERIZED. ALSO IN PHASE II FET STRUCTURES WILL BE INVESTIGATED. ???????????