Highly Monodispered MINIM Arrays for Single Electron Transistors

As the current trends in transistor miniaturization are continued down to the molecular level ( in a dimension of tens of nanometers or less), the electronic properties of solids and solid-solid interfaces are inherently different on the nanometer level.It is becoming clear that continued increases in circuit density will require fairly dramatic changes in the way transistors are designed and operated. The concept of single electron transistor has the potential to revolutionize this field. This programseeks to build on the success of Phase I to develop nanoelectronic devices with an innovation that focuses on highly monodispersed MINIM (metal-insulator-nanocluster-insulator-metal arrays for single electron transistors. During Phase I, AMSENTechnologies demonstrated the concept that an innovative template-synthesized MINIM arrays could be potentially used as single electron transistors. During Phase II of this program, AMSEN will build on Phase I success, optimize, build prototyped and fieldtest the technology in partnership with DOD and do the ground work for commercialization. Phase II will commercialize the technology and anticipated spin-off The potential for commercialization of single electron devices with good performance andmanufacturability is extremely high. Applications for single electron transistors include ultra-high density information storage, supersensitive electrometry, near-infrared radiation receivers and DC current standard.