Novel Approach to High Power and High Speed Modulator

The light intensity modulator is a key component for optical information processing and communication systems. The currently available electro-optical light modulators have two major drawbacks of (1) low power handling capability due to material's optical damage and (2) poor modulation efficiency at high frequencies resulting from velocity mismatching. The need for high speed and high power light modulators is acute in order to facilitate the spread of optical information processing technologies. NZ Applied Technologies proposes to develop a novel high speed and high power electro-optical modulator based on quasi-phase matching via periodic domain inverson in MgO doped LiNbO3. We anticipate to achieve a new electro-optic modulator record of 50GHz with half-wave voltage of only 2V and high optical power ~ 200mW by the combination of doping, domain inversion, using longer electrode, and elimination of thick buffer layer. This program uniquely combines NZAT's material and device processing capability with Integrated Optical Circuit Consultants' expertise with LiNbO3 modulators. A preliminary device will be fabricated in Phase I.