SBIR/STTR Research Award

SBIR Phase I: Advanced PEALD Processing Technology using Nanosecond Pulse Power

Award identifier 82f0ee9a2a948e171712e3828cc084e584bf1ed7764ac4542a176ab1c285be6fAwarding agency National Science Foundation

Award amount

$305,000

Program and phase

SBIR · Phase I

Award year

2025

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Stellar Engiine
Proposal award date
2025-02-13
Contract end date
2025-09-30
UEI
MD7ETBCYW8W7
Solicitation number
NSF 24-579
Topic code
S

Research abstract

The broader impact/commercial impacts of this Small Business Innovation Research (SBIR) phase I project is in advancing semiconductor processing by providing cutting-edge technology to produce super thin coatings for advanced chips manufacturing. This technology uses tiniest controlled bursts of electricity to significantly enhance coating quality, eliminate processing steps, lowering costs, and reducing energy usage. The product will consist of a unique type of power generator, new to semiconductor processing, integrated to an applicator for energizing the gases used in the coating process. The product protected by strong patents and trade secrets will be sold to leading semiconductor process equipment companies for use on their existing systems, with company’s product market opportunity projected to be $200 million in year three of production. Beyond this first thin coating application, the technology can be extended to other advanced semiconductor applications, further growing company’s market opportunity to over $500M. This Small Business Innovation Research (SBIR) Phase I project addresses the limitations of current plasma enhanced atomic layer deposition to cost-effectively deposit hydrogen free, conformal oxide and nitride films. A new solution to semiconductor plasma processing is proposed using an array of micro-plasma dielectric barrier discharge applicators, powered by nanosecond scale high voltage pulses, capable of breaking down non-hydrogen containing reactants such as nitrogen thus avoiding hydrogen containing reactants such as ammonia, and achieve improved film conformality by eliminating ion bias induced anisotropic deposition. Research objectives are, firstly, characterize set of 5 applicators over a range of physical electrode configurations, gas types, flow rates and pressure, and electrical pulse parameters, to determine optimum conditions for producing desired radicals and active species, whilst avoiding undesirable plasma breakdown regimes

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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