Growth Technology for Semi Insulating GaN Substrate Materials

TDI proposes to develop semi insulating GaN substrate materials using novel vapor phase growth approach. Our recent experiments show that GaN epitaxial layers having a specific resistivity of 10e12 Ohm cm at 300 K and 109 Ohm cm at 500 K can be grown byhydride vapor phase epitaxy (HVPE). The HVPE technique is a well-established, relatively cheap method to grow thick layers of GaN on sapphire and silicon carbide substrates. This epitaxial method provides high growth rate sufficient to obtain quasi-bulkmaterial. The goal of the Phase I is to prove the concept and demonstrate thick semi insulating GaN layers on 2 inch sapphire suitable for substrate applications for GaN-based microwave devices. In the Phase II TDI will focus on the development ofmanufacturing technology for bulk semi insulating GaN growth and substrate fabrication.Semi insulating GaN substrates will find a host of applications in high-power, high-frequency, and high-temperature electronics for military and industrial needs.