Improved Cost and Radiation Hardness for Silicon Detectors

40856 November 13, 1996 IntraSpec, Inc. The use of silicon radiation detectors in physics research, space research, environmental monitoring, neutron and x-ray imaging, etc. is seriously restricted by their cost and, in many cases, their sensitivity to radiation damage. The radiation damage problem is particularly acute in the case of finely segmented detectors and silicon drift chambers which are frequently used in hostile radiation environments. Current oxide-passivated, ion-implanted detector designs and fabrication processes are too complicated, and major cost improvements can be accomplished by simplifying the design and manufacturing process. This project is aimed at reducing detector cost by addressing the following changes: a new source for uniform Si wafers, a new approach to wafer polishing, and combining surface barrier and diffused junction contact technologies with an improved approach to oxide passivation. Anticipated Results/Potential Commercial Applications as described by the awardee: There are important markets for reliable silicon radiation detectors with lower cost, improved performance and better resistance to radiation damage.