SBIR/STTR Research Award

Quantum Dot/Silicon MixedIC Sensor Technology

Award identifier b06e8e4caf7fe617ccbcffb45b1687c7dca9acdab5ac6db83a4226daeac452a6Awarding agency Department of Defense · Missile Defense Agency

Award amount

$69,919

Program and phase

STTR · Phase I

Award year

1998

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Nanolume, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Chemically synthesized quantum dots with an emphasis on Gallium Nitride are used in conjunction with polymeric dielectrics to make thin film materials for coated layers on bulk semiconductor substrates such as Silicon wafers. The layers supply high performance radiation sensing crystalline semiconductor materials to the surface of standard Silicon ICs. Multiple bands may be sensed by mixing and matching quantum dot materials. Novel Opto-Capacitive devices are made by utilizing the change in refractive index of the quantum dots with absorption of radiation.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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