SBIR/STTR Research Award

SBIR Phase I: A Novel Crystal Growth Technology for Production of ZnO Single Crystal Substrates for Light Emitters and Detectors

Award identifier 96141119e16b413728f09f2a444dfd902503e770f0b1961ed1f4730441315e74Awarding agency National Science Foundation

Award amount

$150,000

Program and phase

SBIR · Phase I

Award year

2010

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
FAIRFIELD CRYSTAL TECHNOLOGY, LLC
Proposal award date
Not reported
Contract end date
Not reported
UEI
L8NGYMXQN9H6
Solicitation number
NSF 09-541
Topic code
NM

Research abstract

This Small Business Innovation Research (SBIR) Phase I project will investigate a novel technique for growing large-diameter, high-quality ZnO single crystals. ZnO single crystal substrates are suitable for fabrication of epitaxial structures for both GaN-based and ZnO-based devices, such as light emitters and detectors, as well as for high power, high temperature and high frequency devices. The proposed growth technique has the potential to produce large diameter, high quality ZnO bulk single crystal boules in an efficient manner at a low cost. Commercialization of high-quality, low-cost ZnO single crystal substrates may have a dramatic impact on the development and commercialization of both GaN-based and ZnO-based devices for a variety of applications.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

10 SBIR/STTR records share this UEI (2005–2015). Reported award amounts total $2,208,687. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: National Science Foundation, Department of Energy

Agency intelligence

National Science Foundation

Back to SBIR/STTR Research Awards

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