SBIR/STTR Research Award
X-RAY/UV SENSORS FROM DOPED NANOCRYSTALS OF SEMICONDUCTORS
Award amount
$59,731Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Nanocrystals Technol Ltd
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
An efficient and ultrafast sensor for X-ray and UV radiation is proposed based on doped nanocrystals. These doped nanocrystals consist of rare-earth doped wide band gap II-VI semiconductors. The present measurements yield conventional efficiency and ultrafast recombination times. The combination of pulsed UV/X-ray sources and efficient and ultrafast sensors is expected to yield systems with increased signal to noise ration. These will impact next generation sensors in the X-ray, UV, and visible radiation as well as allow us to develop a new class of imaging systems.
Technology keywords
Not reported