SBIR/STTR Research Award

TUNABLE MILLIMETER WAVE FILTER

Award identifier 6e7093c2f3bd59eddea11e69571da560da3b59fc9752b02966702094f686bdf5Awarding agency Department of Defense · Missile Defense Agency

Award amount

$60,000

Program and phase

SBIR · Phase I

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
MASSACHUSETTS TECHNOLOGICAL LABORATORY
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

In the past microwave/millimeter wave (MMW) ferrite filters have been fabricated utilizing insulating ferrite materials. We propose for the first time a degisn in which metallic magnetic films are used. Whereas conventional filter designs which include insulating ferrite materials utilize the phenomenon of ferromagnetic resonance (FMR), we propose the use of magnetic metal films in filter designs and utilize the phenomenon of ferromagnetic anti-resonance (FMAR). Preliminary studies indicate that in comparing the characteristics of the two thypes of filters the filter utilizing magnetic metal films are superior in terms of insertion loss and integrability with other planer MMW devices. Our design includes a thin magnetic metal film in the substrate layer of a microstrip line parallel to the ground plane. The characteristic impedance of the microstrip line in the absence of the metal film is 50 ohm. A dc magnetic field is applied normal to the film plane. When the magnetic film is biased away from FMAR the magnetic metal film interferes strongly with wave propagation. The characteristic impedance of the line is much smaller than 50 ohm. When the magnetic metal film is biased at FMAR the skin depth within the magnetic metal film becomes substantially greater than the film thickness. At FMAR the impedance of the line changes back to 50 ohm which matches the input signal feeder line. Therefore, design of band-pass filter can be realized in which the transmission frequency occurs at FMAR frequency with a frequency bandwidth equal to the FMAR linewidth.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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