SBIR/STTR Research Award
STRAINED ALGAINAS SEMICONDUCTING MATERIAL
Award amount
$47,231Program and phase
SBIR · Phase IAward year
1991Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Northeast Semiconductor Inc
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
ALGAAS LASER DIODE ARRAYS USED AT 785-808 NM TO PUMP YAG-TYPE SOLID STATE LASERS NEED IMPROVEMENT IN RELIABILITY AND POWER EFFICIENCY. DIODE LASERS WITH INGAAS QUANTUM WELLS, USED FOR LONGER WAVELENGTH PUMPING, HAVE DEMONSTRATED IMPROVED LIFE AND EFFICIENCY. THIS PROGRAM WILL STUDY THE QUATERNARY MATERIAL SYSTEM, ALXGAYINAS, TO DETERMINING GROWTH CONDITIONS WHICH CAN RESULT IN HIGHLY RELIABLE DIODE LASERS EMITTING LIGHT AT ^<850 NM. THE PROGRAM WIL USE MBE GROWN MULTIPLE QUANTUM WELL STRUCTURES AND PHOTOLUMINESCENCE DIAGNOSTICS TO EFFICIENTLY EXPLORE A WIDE RANGE OF COMPOSITIONS, GROWTH TEMPERATURES AND FLUXES. THESE DATA WILL BE USED TO DESIGN AND BUILD LASER DIODES TO DEMONSTRATE LIFETIMES AND POWER EFFICIENCIES.
Technology keywords
Not reported