A New Large Area Monolithic Avalanche Photodiode Array Having Widespread Applications and Lower Manufacturing Costs

50598-98-I A New Large Area Monolithic Avalanche Photodiode Array Having Widespread Applications and Lower Manufacturing Costs--Silicon Power Corporation, 175 Great Valley Parkway, Malvern, PA 19355-1321; (610) 407-4700 Mr. Dante Piccone, Principal Investigator Mr. Charles K. Fellows, Business Official DOE Grant No. DE-FG02-98ER82668 Amount: $72,890 Avalanche photodiode devices, needed for nuclear physics research, have the potential for widespread application, but their large scale production into commercial products has, so far, been prevented by the lack of large detection area, performance, reliability and high manufacturing cost. A new large area monolithic avalanche photodiode array based on planar deep diffusion technology using a novel self-terminating high voltage junction design will be developed which overcomes the limitations associated with current avalanche photodiodes. Phase I will experimentally demonstrate the feasibility of this monolithic array by fabricating the devices and measuring the breakdown voltage, gain, leakage current, and isolation. Commercial Applications and Other Benefits as described by the awardee: Large area monolithic arrays of avalanche photodiodes with good performance and reliability should enable new generations of medical imaging products, environmental monitoring equipment and gamma ray instrumentation. These devices can result in health care containment as well as find use in research and defense applications._