Wavelength controlled high power laser diode arrays with reduced temperature sensitivity

SDL Inc. proposes to develop temperature insensitive laser diodes arrays at 810 nm wavelength. These arrays will experience only 7.5 nm change in peak wavelength and only 20% variation in output power at constand drive current over an ambient temperature range of -50 degrees C to +75 degrees C. The wavelength of present state-of-the-art arrays would change by 35 nm over the same temperature range. In addition, the spectral width is reduced to less thatn 1 nm and wavelength sensitivity to optical feedback is eliminated. The array design will be consistent with proven reliabilt high temperature oepration of high power laser diodes demonstrated by SDL, where greater than 300 W QCW has been demonstrated. The design is fully compatible with existing bar packaging and stacking schemes and does not require any active heating or cooling to achieve the proposed temperature insensitivity. The temperature insensitive bar is expected to significantly impact applications using diode-pumped solid state lasers by dramatically reducing the cost and weight of cooling the diodes.