Development of a Truly Lattice-Matched III-Nitride Technology for

Cermet, in collaboration with researchers at Georgia Institute of Technology, proposes to implement a lattice matched III-Nitride technology using existing substrates. The implementation of a lattice matched substrate promises to produce near dislocationfree III-Nitrides for the first time while the use of an existing substrate technology dramatically lowers development cost and reduces the development cycle. Specifically, we propose to use existing semiconductor substrates to grow lattice matched InGaNto produce superior optoelectronic/electronic devices. The target composition of InGaN will result in the lowest wavelength emitters possible without the necessity of expensive UV-grade optics, has highly efficient emission, and should lead to improvedmobility in transistor devices. Highly efficient, vertical current nitride LEDs and FETs will be demonstrated early in Phase II, based on the successful completion of phase I objectivesThe successful completion of Phase I goals will demonstrate theutility of using this technology to improve the performance of high frequency electronic devices and short wavelength LED's, laser diodes, and detectors.