Novel, Low - Cost Technology for Solid State Lighting

73106S03-I In the United States, the annual amount of electricity used for lighting residential and commercial buildings is equal to approximately 20% of the total power generated. Widespread use of white LEDs would reduce the overall electrical demand for lighting by 50%. At this time, the major hurdle for solid-state lighting is the high cost of GaN-based LED production. This project will demonstrate a novel, substantially-reduced-cost technology for the fabrication of group-III nitride epitaxial structures for white LEDs. This novel technology is based on hydride vapor phase epitaxy (HVPE), a low-cost method for producing thick quasi-bulk GaN materials, GaN-on-sapphire, and AlN-on-sapphire templates used as substrates for device fabrication. Phase I will extend the epitaxial technology for the fabrication of Al(In)GaN-based LED devices in lighting applications. General lighting devices will be fabricated by packaging blue or UV LEDs with a white light conversion phosphor blend. Phase II will focus on the development of cost-effective technology for the production of multi-wafer blue, UV, and white-light LEDs. Commercial Applications and Other Benefits as described by awardee: The technology should dramatically lower overall device cost and enhance device and component development. White-light LEDs are needed for lighting in residential and commercial buildings, task lighting, aviation signals, and hazard indicators; UV LEDs are needed for biochemical agent detection and/or eradication; and blue LEDs have found a market in full-color displays, back lighting, and indicator lights.