SECOND GENERATION LEAD CVD PRECURSORS FOR PBTIO3

CHEMICAL VAPOR DEPOSITION (CVD) OF LEAD-BASED FERROELECTRICS SUCH AS LEAD TITANATE, LEAD ZIRCONATE TITANATE (PZT), AND LEAD LANTHANUM ZIRCONATE TITANATE (PLZT), IS THE MOST PROMISING MANUFACTURING METHOD FOR A WIDE VARIETY OF NEXT GENERATION ELECTRONIC DEVICES INCLUDING RADIATION-HARD NON-VOLATILE MEMORIES, ELECTRO-OPTIC SPATIAL LIGHT MODULATORS, PIEZOELECTRIC ACTUATORS, AND PYROELECTRIC INFRARED DETECTORS. THE USE OF THIS TECHNIQUE IN A MANUFACTURING ENVIRONMENT IS CURRENTLY LIMITED BY THE INADEQUACY OF CURRENT SOURCE REAGENTS (LOW VOLATILITY OR HIGH TOXICITY). RESEARCHERS ARE INVESTIGATING NEW LEAD PRECURSORS SPECIFICALLY DESIGNED TO MEET BOTH FILM GROWTH AND SAFETY REQUIREMENTS.