Multi-Spectral Imaging Ellipsometer for Fast, In-Situ Monitoring of Monolayer Film Deposition

In this Phase I project, Physical Optics Corporation proposes a novel instrument for the in-situ monitoring of very thin layer film deposition. The system makes use of imaging ellipsometry inside the reaction chamber to provide a spatially resolved measurement of the sample surface in the range of one second, thus enabling monitoring of film growth topography during the coating process. Operating the system at the quasi-Brewster angle, close to the null-ellipsometer condition, gives enhanced sensitivity. The use of several spectral bands for the measurement adds additional parameters to film thickness determination, providing a very precise readout, even at the monolayer level. The monolayer imaging will be performed with about 10 micrometer lateral resolution over the entire surface of the substrate, leading to highly-resolved, fast information for judging the kinetics of surface coverage. This device has commercial potential for optimization of coating processes, for surface investigations, and for sensing applications. To date, most measurements of very thin layers either do not have the required sensitivity for single monolayers or are single-point measurements that require scanning. Since it avoids these problems, the proposed apparatus will be superior for in-situ monitoring and for general sample characterization. BENEFITS: The proposed system will deliver fast, in-situ information about surface coverage and film deposition, opening a vast market in thin-film deposition systems. The device can also be a supplement to Reactive Ion Etching chambers, as well as a potential standard tool for the large market of semiconductor or thin-film processing laboratories and plants.