Nanometer Magnetoresistive Random Access Memory

New cell concepts using better magnetoresistive material will make Magnetoresistive Random Access Memory (MRAM) denser for the same lithography than other semiconductor solid state memories such as DRAM, EEPROM, and flash, while retaining the advantages of both nonvolatility (saving data with no power) and durability (with infinite write- and read-cycling). Area densities of ten thousand million bits/cm2 will be achieved using 0.05 micron E-beam lithography. With these new cells, it may be possible to replace the present three level hierarchy (main, disk buffer, and disk memories) in computers with a single MRAM, radically improving system performance, size and weight, reliability, and cost. In Phase I the memory cell will be designed and simulated, and initial process defintion completed. In Phase II, the cells will be demonstrated.