SBIR/STTR Research Award
Negative Electron Affinity Diamond Vacuum Collector Transistor
Award amount
$58,463Program and phase
SBIR · Phase IAward year
1993Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Advanced Technologies/Laboratories Intl
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMANCE OF THE DEVICE. THE DIAMOND TRANSISTOR IS EXPECTED TO HAVE EXCEPTIONAL HIGH FREQUENCY AND TEMPERATURE PERFORMANCE. PHASE II WILL EXTEND THE PHASE I PROGRAM TO INCLUDE FULL DEVICE DESIGN, FABRICATION, AND TESTING. PHASE III WE WILL EXPECT RAPID COMMERCIALIZATION OF THE DEVICES IN MICROWAVE COMMUNICATIONS, FLAT PANEL DISPLAYS, AND ULTRA FAST SWITCHES.
Technology keywords
Not reported