SBIR/STTR Research Award

Negative Electron Affinity Diamond Vacuum Collector Transistor

Award identifier 69376892cb2601c5951eef5a22b8b70fdd7545a8231a28dbd5ce5518d6d4757fAwarding agency Department of Defense · Missile Defense Agency

Award amount

$58,463

Program and phase

SBIR · Phase I

Award year

1993

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Advanced Technologies/Laboratories Intl
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMANCE OF THE DEVICE. THE DIAMOND TRANSISTOR IS EXPECTED TO HAVE EXCEPTIONAL HIGH FREQUENCY AND TEMPERATURE PERFORMANCE. PHASE II WILL EXTEND THE PHASE I PROGRAM TO INCLUDE FULL DEVICE DESIGN, FABRICATION, AND TESTING. PHASE III WE WILL EXPECT RAPID COMMERCIALIZATION OF THE DEVICES IN MICROWAVE COMMUNICATIONS, FLAT PANEL DISPLAYS, AND ULTRA FAST SWITCHES.

Technology keywords

Not reported

Agency intelligence

Department of Defense

Back to SBIR/STTR Research Awards

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