EPITAXIAL GROWTH OF SEMICONDUCTORS ON HIGH-TC SUPERCONDUCTORCRYSTALS

THIS PROJECT INVESTIGATES THE EPITAXIAL GROWTH OF SEMICONDUCTORS (SI AND GAAS) ON SINGLE-CRYSTAL, HIGH-TEMPERATURE SUPERCONDUCTORS. THESE MATERIALS WILL LEAD TO THE MONOLITHIC INTEGRATION OF HIGH-TEMPERATURE SUPERCONDUCTING DEVICES AND ELECTRONIC/OPTOELECTRONIC SEMICONDUCTOR DEVICES. EPITAXIAL-SEMICONDUCTOR AND HIGH-TC-SUPERCONDUCTOR MATERIALS WILL ALSO LEAD TO THE INVENTION OF NEW DEVICES INVOLVING THE INTERPLAY OF THE AS-YET-UNKNOWN SUPERCONDUCTING MECHANISM AND SEMICONDUCTOR PHYSICS. THE DEVELOPMENT WILL INVOLVE: DEVISING A METHOD FOR SUBSTRATE PREPARATION; DETERMINING THE SUBSTRATE SURFACEBEHAVIOR IN ULTRAHIGH-VACUUM AT TEMPERATURES UP TO THE FILM-GROWTH TEMPERATURES; DETERMINING THE OPTIMUM PARAMETERSFOR GROWTH OF EACH SEMICONDUCTOR; AND CHARACTERIZING THE SEMICONDUCTOR AND HIGH-TC-SUPERCONDUCTOR MATERIALS TO DETERMINE STRUCTURAL, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES. PHASE II WILL STUDY THE USE OF EPITAXIAL SEMICONDUCTOR AND HIGH-TC-SUPERCONDUCTOR MATERIALS FOR MONOLITHIC INTEGRATED CIRCUIT SENSORS, SUPERCONDUCTING MIXERS FOR MILLIMETER AND FAR-INFRARED RECEIVERS, AND SEMICONDUCTOR CIRCUITS FOR HIGH-SPEED, ON-CHIP SIGNAL PROCESSING. THIS PROJECT INVESTIGATES THE EPITAXIAL GROWTH OF SEMICONDUCTORS (SI AND GAAS) ON SINGLE-CRYSTAL, HIGH-TEMPERATURE SUPERCONDUCTORS. THESE MATERIALS WILL LEAD TO THE MONOLITHIC INTEGRATION OF HIGH-TEMPERATURE SUPERCONDUCTING DEVICES AND ELECTRONIC/OPTOELECTRONIC SEMICONDUCTOR DEVICES. EPITAXIAL-SEMICONDUCTOR AND HIGH-TC-SUPERCONDUCTOR MATERIALS WILL ALSO LEAD TO THE INVENTION OF NEW DEVICES INVOLVING THE INTERPLAY OF THE AS-YET-UNKNOWN SUPERCONDUCTING MECHANISM AND SEMICONDUCTOR PHYSICS. THE DEVELOPMENT WILL INVOLVE: DEVISING A METHOD FOR SUBSTRATE PREPARATION; DETERMINING THE SUBSTRATE SURFACEBEHAVIOR IN ULTRAHIGH-VACUUM AT TEMPERATURES UP TO THE FILM-GROWTH TEMPERATURES; DETERMINING THE OPTIMUM PARAMETERSFOR GROWTH OF EACH SEMICONDUCTOR; AND CHARACTERIZING THE SEMICONDUCTOR AND HIGH-TC-SUPERCONDUCTOR MATERIALS TO DETERMINE STRUCTURAL, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES. PHASE II WILL STUDY THE USE OF EPITAXIAL SEMICONDUCTOR AND HIGH-TC-SUPERCONDUCTOR MATERIALS FOR MONOLITHIC INTEGRATED CIRCUIT SENSORS, SUPERCONDUCTING MIXERS FOR MILLIMETER AND FAR-INFRARED RECEIVERS, AND SEMICONDUCTOR CIRCUITS FOR HIGH-SPEED, ON-CHIP SIGNAL PROCESSING.