"Large Diameter (3"), Indium Phosphide, (100) Oriented Single Crystal Growth"

Based on the extensive experience related to the growth of low defect density 2" diameter Indium Phosphide, (InP), crystals, we propose to optimize the thermal environment that was recently developed at CrystaComm for the growth of three inch diameter InP crystals. Growth parameters such as temperature gradients, inert overpressure levels and boric oxide thickness will be investigated. One to two kilogram (100) oriented InP crystals will be grown in this improved environment and will be characterized, as to the defect density by wet chemical and x-ray topographic techniques. Polished sample wafers will be supplied to designated laboratories for evaluation and epitaxial growth. ANTICIPATED BENEFITS: Successful completion of Phase II will make possible the commercial availability of 3", (100) oriented InP wafers of comparable quality that is presently available in wafers less than 2" in diameter.