An Innovative Approach to Characterizing Semi-insulating SiC Wafers

Silicon carbide (SiC) is the most promising substrate material for the nextgeneration high power, high frequency power transistors replacing travelingwave tube for radar power applications. Sterling's results obtained to dateclearly indicate the existence of a better method of producingsemi-insulating SiC wafers of improved quality. However, accurate andnon-destructive measurement of wafer resistivity for such wafers remains asignificant challenge. In response to the Ballistic Missile DefenseOrganization SBIR topic BMDO 01-014, Sterling proposes a Phase I effort todemonstrate the feasibility of a unique resistivity mapping technique forhigh resistivity (semi-insulating) SiC wafers.Future high frequency programs such as TMD and MEADS as well as futurecommercial applications (satellite communications and cellular basestations) using advanced microwave power amplifiers require advancedmaterials and devices to realize those systems. Well characterizedsemi-insulating substrates, of higher quality, improved uniformity andlower cost will enable the faster, cheaper proliferation of wide band-gapmicrowave power devices (MESFETs, MODFETs) used in missile defense, airdefense and fire control radar systems.