SBIR/STTR Research Award
GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH
Award amount
$60,000Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- IONWERKS INC
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- XFHSJJLN7ZQ7
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Ionwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This chamber will include two proprietary growth techniques which we have found to be crucial for formation of cBN thin films. Design and construction of this chamber is underway. We will use this equipment to grow lattice matched InGaN/ZnO having a bandgap of around 3.1 eV.
Technology keywords
Not reported
Other awards by this recipient
Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.
- Nanoparticulate Coatings Enhance Ion Detection
- Diode lasers and Small Nanoparticulate Matrices Combine to Elevate Sensitivity of MILDI-MSI
- Miniature Recoil Ion Mass Spectrometer enables correlative elemental isotopic and backscatter analysis from solid nanovolumes
- Nanoparticulate Coatings Enhance Ion Detection
- Gas Phase Synthesis and Implantation of Metastable Intermolecular Compounds (MICs)
Research funding history
65 SBIR/STTR records share this UEI (1986–2021). Reported award amounts total $17,405,049. Reported amounts are not federal obligations.
Phases: Phase I, Phase II
Agencies: Department of Health and Human Services, Department of Defense, National Aeronautics and Space Administration, Department of Energy, National Science Foundation