ULTRA-DENSE MAGNETORESISTIVE MASS MEMORY

THE PROPOSED CONCEPT IS AN ULTRA-DENSE MAGNETORESISTIVE MASS MEMORY WITH AN ACCESS TIME OF A FEW MICROSECONDS, 100 MBYTES/SECOND DATA RATES, AND HIGH RELIABILITY DUE TO THE INHERENT RELIABILITY OF MAGNETIC STORAGE WITH NO MOVING PARTS. THE MASS MEMORY REQUIRES NO STANDBY POWER AND CAN BERADIATION HARD. THE CONCEPTUAL DESIGN WILL UTILIZE THE MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) TECHNOLOGY CONCEIVED BY TWO OF THE INVESTIGATORS AND DEVELOPED FOR SPACE APPLICATION AT HONEYWELL(1). THE PROPOSED CONCEPTUAL DESIGN PROGRAM FOR A MRAM MASS MEMORY WOULD INCLUDE VERIFICATION TESTING OF MEMORY DENSITIES IN EXCESS OF 10(8) BIT/CM(2), DESIGN AND SIMULATION OF ALL CIRCUIT BLOCKS, A FLOOR PLAN FOR CIRCUITS AND THE INTEGRATED SYSTEM, THERMAL ANALYSIS, ELECTRICAL POWER AND DATA BUS ANALYSIS, AND DENSITY CALCULATIONS. AT THE CONCLUSION OF THE PHASE 1 RESEARCH, ALL PRELIMINARY WORK TO THE START OF A MASS MEMORY SYSTEM DEVELOPMENT WILL HAVE BEEN COMPLETED.