HIGH TEMPERATURE SUPERCONDUCTING JOSEPHSON JUNCTIONS ON SILICON SUBSTRATES FOR RF COMMUNICATIONS

We propose to develop manufacturable high-temperature superconducting (HTS) Josephson junctions on silicon substrates. This technology will make available a wide range of silicon fabrication methods, allowing superconducting and semiconducting circuit elements on the same chip. The ultimate goal is to provide high performance monolithic rf components combining active and passive superconducting components with integrated semiconducting devices. The program will couple breakthroughs in HTS Josephson junction and thin film fabrication technology for silicon substrates. We will investigate two processing routes towards a monolithic Josephson junction technology on silicon, both of which have previously yielded junctions with excellent rf properties on metal oxide substrates. The program will utilize the research staff's experience in two key areas: HTS Josephson technology and HTS thin films on silicon substrates.