DIAMOND-SILICON HETEROSTRUCTURE BIPOLAR TRANSISTORS USING POLYCRYSTALLINE CVD DIAMOND FILMS

IN ORDER TO BEST USE NEW GENERATION CVD DIAMOND FILMS FOR ADVANCED ELECTRONIC APPLICATIONS, WE PROPOSE COMBINING DIAMOND THIN FILMS WITH SINGLE CRYSTAL SILICON TO PRODUCE DIAMOND-SILICON HETEROSTRUCTURE (DSH) BIPOLAR TRANSISTORS FOR INCREASED PERFORMANCE. DIAMOND-SILICON HETEROSTRUCTURE OFFER THE POSSIBILITY OF HIGH SPEED, HIGH DENSITY BIPOLAR DEVICES COMPATIBLE WITH COMMERCIAL SILICON SEMICONDUCTOR TECHNOLOGIES. THE OBJECTIVE OF THIS RESEARCH PROGRAM IS TO FABRICATE AND CHARACTERIZE DIAMOND-SILICON HETEROSTRUCTURE (DSH) BIPOLAR TRANSISTORS AS AN INITIAL STEP TOWARDS COMMERCIAL PRODUCTION OF DSH BIPOLAR INTEGRATED CIRCUITS. PHASE I WILL FOCUS ON THE MATERIAL ISSUES WHICH DETERMINE THE FEASIBILITY OF THIS APPROACH. IF FEASIBILITY IS SUCCESSFULLY DEMONSTRATED, PHASE II WILL BE DEVOTED TO FABRICATING AND CHARACTERIZING DSH BIPOLAR DEVICES. PHASE I ACTIVITIES INCLUDE: P-TYPE DOPING AND CHARACTERIZATION OF CVD DIAMOND FILMS; DETERMINATION OF DIAMOND MORPHOLOGY AND GRAIN BOUNDARY EFFECTS ON ELECTRONIC PROPERTIES; AND DEMONSTRATION AND CHARACTERIZATION OF PN HETEROJUNCTIONS COMPOSED OF P-TYPE DIAMOND ON N-TYPE SILICON.