DEPTH POFILING IN ALGAAS AND LINOO3 USING SPUTTER INITIATED RESONANCE IONIZATION SPECTROSCOPY

WE PROPOSE THE EXTENSION OF A NEW ANALYTICAL TECHNIQUE, SPUTTER INITIATED RESONANCE IONIZATION SPECTROSCOPY (SIRIS) TO INCLUDE DEPTH PROFILING. THIS PHASE I PROJECT WILL DETERMINE THE FEASIBILTY OF MAKING THIS PRELIMINARY MEASUREMENTS USING THE SIRIS TECHNIQUE ON STANDARD SAMPLES OF SI DOPED ALGAAS AND TI DOPED LINBO3. SUCH SAMPLES ARE OF INTEREST TO THE AIR FORCE'S VHSIC AND ELECTRO-0PTIC DEVELOPMENT PROGRAMS. IN SIRIS, AN ARGO ION BEAM SPUTTERS A SMALL QUANTITY OF SOLID SAMPLE INTO THE GAS PHASE. A LASER THEN SELECTIVELY (AND EFFICIENTLY) IONIZES ATOMS OF A PARTICULAR ELEMENT, USING RESONANCE IONIZATION SPECTROSCOPY (RIS). RESULTING IONS ARE ANALYZED IN A MAGENTIC MASS SPECTROMETER, THUS ADDING ISOTOPIC SELECTIVITY TO THE ELEMENTAL SELECTIVITY PROVIDED BY RIS IN PHASE I OF THE PROPOSED PROJECT, WE WOULD DEMONSTRATE THE SENSITIVITY OF SIRIS TO DETECT SI AND TI AND WOULD DETERMINE THE DEPTH RESOLUTION THAT COULD BE ACHIEVED BY INCORPORATING DEPTH PROFILING CAPABILITY INTO THE TECHNIQUE.