SBIR/STTR Research Award

A Radiation Hard Self Bias Low Noise Amplifier

Award identifier 31de540caaf7613cb6000edb8671f69f48675d9b5e248210ceebaff356ad98d5Awarding agency Department of Defense · Air Force

Award amount

$99,995

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
TLC Precision Wafer Technology, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Current military and commercial communication systems at lower frequencies experience spectrum crowding, and does not have wide bandwidths needed for high data rates. Broadband Low Noise Amplifiers (LNA) are crucial components in any receiver system.Although a wide variety of LNAs are currently available in the frequency bands below 50 GHz, little development has occurred in the 49 to 52 GHz range. Future satellite communication systems are in need of radiation hard, reliable LNAs in this frequencyrange. The TLC proposed wide band LNA takes advantages of the patented substrate engineering technologies, design, and microfabrication capabilities to develop a radiation hard amplifier capable of providing a flat gain, for temperatures of -40¿ C to +80¿C, using InP PHEMT technology. This proposed project results in a wide band high gain, low noise figure, Low Noise Amplifier, which is needed in the present and future communication receivers. Applications include several military systems such as SATCOM(satellite communiation) systems. This LNA is also very useful in the transceivers of missile seeker, collusion avoidance radars, etc.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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