SBIR/STTR Research Award

AN ACTIVE HTS SWITCH FOR MICROWAVE CIRCUITS

Award identifier a6cb5390f30353eec2ad50b089c8e6ef2f50f66dfe7862099b5c464c27ca7c4aAwarding agency Department of Defense · Air Force

Award amount

$58,814

Program and phase

SBIR · Phase I

Award year

1992

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Award details

Awarding agency
Department of Defense
Branch
Air Force
Recipient company
SUPERCONDUCTOR TECHNOLOGIES, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
N2JPLBX5FQ24
Solicitation number
Not reported
Topic code
Not reported

Research abstract

THE ADVANTAGES OF HIGH TEMPERATURE SUPERCONDUCTORS COULD BE WIDELY UTILIZED IN EW SYSTEMS IF A LOW LOSS, HIGH-DYNAMIC RANGE SWITCH, COMPATIBLE WITH THE CRYOGENIC ENVIRONMENT COULD BE DEMONSTRATED. GAAS FET SWITCHES AND PIN DIODE SWITCHES ARE THE MAIN SWITCH TECHNOLOGIES USED IN MICROWAVE CIRCUITS, BUT NEITHER TYPE IS OPTIMUM FOR USE WITH HTS DEVICES. STI HAS PROPOSED AN INNOVATIVE THREE TERMINAL DEVICE, BASED ON THE KNOWN ANISOTROPY OF HIGH TEMPERATURE SUPERCONDUCTORS, TO ACHIEVE LOW LOSS SWITCHING. PHASE I WILL BE A FEASIBILITY STUDY TO DETERMINE THE DIFFERENCE IN CRITICAL CURRENT OF AN A-AXIS FILM IN THE C- AND AB-AXIS DIRECTIONS. A SIMPLE SWITCH WILL BE FABRICATED TO DEMONSTRATE THE FEASIBILITY OF THIS CONCEPT.

Technology keywords

Not reported

Other awards by this recipient

Verified by the same UEI. These are other public SBIR/STTR award pages, not a merged company record.

Research funding history

44 SBIR/STTR records share this UEI (1989–2012). Reported award amounts total $10,247,372. Reported amounts are not federal obligations.

Phases: Phase I, Phase II

Agencies: Department of Defense, National Science Foundation, National Aeronautics and Space Administration, Department of Health and Human Services, Department of Commerce

Agency intelligence

Department of Defense

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