SBIR/STTR Research Award

Automated Electromagnetic Optimization for Advanced Antenna Design

Award identifier 8ee4aa93d72ba1083cb99563c697d8eee98aa8525b8bf855a9be4d2f38610da5Awarding agency Department of Defense · Navy

Award amount

$70,000

Program and phase

SBIR · Phase I

Award year

1999

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
NITTANY SCIENTIFIC, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Not Available This proposal addresses the need for high power microwave transistors. Blue Lotus Devices proposes to develop AIGaN/InGaN high electron mobility transistors (HEMT) structures for this application. In Phase I, the heterojunction will be deposited and the electrical and physical properties of the structure characterized. In Phase II, high frequency power HEMTs will be fabricated and tested. The anticipated increase in carrier confinement, sheet carrier concentration and electron mobility will lead to improved power and frequency characteristics of nitride based transistors

Technology keywords

Not reported

Agency intelligence

Department of Defense

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