SBIR/STTR Research Award
Wide Bandgap Heterojunction Bipolar Transistors for X-Band
Award amount
$65,000Program and phase
STTR · Phase IAward year
1998Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- INTRINSIC SEMICONDUCTOR CORP.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
In this Phase I STTR, Sterling Semiconductor--in cooperation with the University of Colorado at Boulder--will develop novel heterojunction bipolar transistor (HBT) semiconductor devices for microwave applications. Specifically, the team will develop I gallium nitride (GaN)/silicon carbide (SIC) N-p-n HBTs, consisting of a gallium nitride emitter on a p-type silicon carbide base and an e-type silicon carbide collector. Successful demonstration of the Phase I tasks will serve as a foundation for a Phase II development of a GaN/SiC-based HBT for X-band operation.
Technology keywords
Not reported