EUV Active Pixel Sensor Array

"Design of EUV Active Pixel Sensor (APS) array with 100% internal quantum efficiency photodiodes has been proposed. Design of the photosensing element of the APS array is based on our AXUV photodiode products which are being used by NIST and othernational laboratories as transfer standards in 1 nm to 250 nm spectral region. APS arrays having 100 micron X 100 micron pixels with directly deposited EUV filter will be designed and fabricated during the phase I research. This will investigatefeasibility of final APS array fabrication in Phase II. In contrast to tens of k-rads hardness of CCDs, the proposed arrays are expected to have a hardness of 1 G-rad when exposed to EUV photons. Owing to their superior radiation hardness, the developedarrays will be extremely useful for EUV imaging of the sun, planets, asteroids and other stars. Other applications of the fabricated arrays will be in plasma diagnostics, UV/EUV lithography and soft x-ray microscopy of biological specimens."