SBIR/STTR Research Award

A HIGH-REPETITION RATE PULSE MODULATOR FOR HIGH-POWER

Award identifier 7ae50815e1fe267cafa41ac76b0552c3546929931f3864105824107c8d12ec9dAwarding agency Department of Defense · Navy

Award amount

$69,913

Program and phase

SBIR · Phase I

Award year

1998

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Award details

Awarding agency
Department of Defense
Branch
Navy
Recipient company
ENGINEERING SPECTRUM, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

The proposed program will concentrate on the design of pulse-amplitude modulators using innovative architectures to overcome the limitations of conventional designs in driving predominantly capacitive loads, such as the modulating anodes of high-power microwave vacuum tubes. The design will necessarily be capable of operation at high pulse voltage levels and at high pulse repetition rates. Typical of such an architecture is the h-Power Microwave-Tube Transmitters the capacitance associated with the modulating anode is charged and discharged through a resonating inductor, or inductors, in a sinusoidal fashion, transferring stored energy rather than dissipating it. There are numerous variants of this concept which must be investigated in order to determine an optimum design depending on the type of electronic switches and how they are used. The program will include the evaluation of the various available electronic switches, including Field-Effect Transistors (FETs), Insulated-Gate Bipolar Transistors (IGBTs), Silicon-Controlled Rectifiers (SCRs), conventional triode and tetrode vacuum tubes, and the will concentrate on selecting the best electronic switch for this application. The effort will also include breadboarding of appropriately scaled portions of complete switches.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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