Gallium Nitride (GaN) Materials for High Temperature Electronics

Parke Mathematical Laboratories proposes to develop and commercialize the thermal gradient solution (TGS) growth process for the production of bulk gallium nitride (GaN) for high temperture electronics applications. In Phase I, Parke Mathematical Laboratories will develop the TGS crystal growth technique for bulk GaN. We will identify the key growth and processing technology development and implementation issues for the TGS growth, characterization and device fabrication processes. We will test the feasibility of the TGS process for the growth of GaN. In Phase II, we will design, build and operate a custom TGS growth system that will encompass the technology developments and improvements highlighted in the Phase I plan. We will demonstrate and optimize the TGS growth and characterization of GaN crystals. Several GaN wafers will be tested for high temperature device performance. Reproducible growth of bulk GaN with superior device performance will prove essential for successful Phase III commercialization. In Phase III, we will team with a III-V device fabrication company and establish a commercial US supply of high quality GaN wafers and devices for high temperature electronic applications.