SBIR/STTR Research Award

SBIR Phase I: High Temperature Pressure Sensor

Award identifier 2f81c3614fc31b895b00d9289cb03eefab5e02382598f232ee32157cdda335b0Awarding agency National Science Foundation

Award amount

$97,138

Program and phase

SBIR · Phase I

Award year

2003

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Award details

Awarding agency
National Science Foundation
Branch
Not reported
Recipient company
Zeus Semiconductor, Inc.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

This Small Business Innovation Research (SBIR) Phase I project will demonstrate the feasibility of fabricating SiC based pressure sensors that function accurately and reliably in harsh environments and at high temperatures (20-800 C). There are a number of uses for such devices, particularly in energy conversion and Conservation applications. These innovations will enable formation of diaphragms with precisely controlled thickness, integrated with strain gauge sensing elements and temperature compensation sensing elements. Phase I will also include demonstration of an innovative SiC packaging concept for high temperature and harsh environment use, which will include materials validation, computational analysis and testing. It is anticipated that the successful demonstration of the pressure sensor chip fabrication Processes, the chip module packaging concepts, and the housing assembly design will enable Subsequent prototype development and then commercialization of pressure sensors for high Temperature and harsh environment applications.

Technology keywords

Not reported

Agency intelligence

National Science Foundation

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