SBIR/STTR Research Award
SBIR Phase I: High Temperature Pressure Sensor
Award amount
$97,138Program and phase
SBIR · Phase IAward year
2003Award details
- Awarding agency
- National Science Foundation
- Branch
- Not reported
- Recipient company
- Zeus Semiconductor, Inc.
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
This Small Business Innovation Research (SBIR) Phase I project will demonstrate the feasibility of fabricating SiC based pressure sensors that function accurately and reliably in harsh environments and at high temperatures (20-800 C). There are a number of uses for such devices, particularly in energy conversion and Conservation applications. These innovations will enable formation of diaphragms with precisely controlled thickness, integrated with strain gauge sensing elements and temperature compensation sensing elements. Phase I will also include demonstration of an innovative SiC packaging concept for high temperature and harsh environment use, which will include materials validation, computational analysis and testing.
It is anticipated that the successful demonstration of the pressure sensor chip fabrication
Processes, the chip module packaging concepts, and the housing assembly design will enable
Subsequent prototype development and then commercialization of pressure sensors for high
Temperature and harsh environment applications.
Technology keywords
Not reported