SBIR/STTR Research Award

5 Watt CW 1 GHz Modulation, Diffraction-limited, Laser Diode

Award identifier 185efca520709d7abc2a94293ddde330037b68e44fb9fc775155dbe165dd7254Awarding agency Department of Defense · Missile Defense Agency

Award amount

$316,000

Program and phase

SBIR · Phase II

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
SDL Inc
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

SPECTRA DIODE LABORATORIES PROPOSES TO DEVELOP A 5 WATT OUTPUT POWER, CONTINUOUS-WAVE, DIFFRACTION-LIMITED LASER DIODE TRANSMITTER OPERATING IN THE NEAR-INFRARED SPECTRUM AT A WAVELENGTH OF 980 NM. THE DEVICE IS FABRICATED FROM A STRAINED-LAYER, SINGLE-QUANTUM-WELL InGaAs/AlGaAs EPITAXIAL WAFER. THE LASER DESIGN CONSISTS OF A SINGLE-MODE DISCRETE MASTER OSCILLATOR COUPLED TO A FLARED-CONTACT POWER AMPLIFIER. THE MASTER OSCILLATOR IS A 150 mW DIFFRACTION-LIMITED LASER THAT CAN BE MODULATED UP TO 1 GHz. THE FLARED AMPLIFIER CLEANLY AMPLIFIES THE MASTER OSCILLATOR OUTPUT UP TO THE 5 WATT POWER LEVEL. THE OUTPUT BEAM, AFTER EXITING THE AMPLIFIER COLLIMATION OPTICS, CONSISTS OF A SINGLE GAUSSIAN DIFFRACTION-LIMITED LOBE. THE LASER SOURCE OFFERS HIGH RELIABILITY AT A VERY HIGH ELECTRICAL-TO-OPTICAL CONVERSION EFFICIENCY EXCEEDING 25%. THE LASER HEAD IS COMPACT, RUGGED, AND PASSIVELY-COOLED, THEREFORE OFFERING MANY ADVANTAGES OVER COMPETING HIGH-POWER INFRARED LASERS SUCH AS Ti:SAPPHIRE OR DIODE-PUMPED Nd:YAG.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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