ErAs:GaAs Photomixers for High-Resolution THz Spectroscopy

A new type of THz photomixer will be developed using a submicron interdigitated-electrode structure fabricated on an Eras:GaAs ultrafast photoconductive layer, an AIAs heat spreader and an AIGas/AIAs dielecric mirror. The Eras:GaAs-based photomixer will provide extremely wide tuning bandwidth (>1 decade) and a continuous-wave output power of roughly 10 microwatt around 100 GHz, at least 1 microwatt and 1 THz, and > 100 nW between 2 and 3 THz. The research will focus on the materials growth and fabrication issues, the electrical and optical performance, and the reliability and packaging necessary to deliver working devices to NIST. COMMERCIAL APPLICATIONS: Phototmixer diodes for generation of coherent THz radiation between ~30 GHz and 3 THz. Will be the basis for a benchtop THz spectrometer without cryogens, high voltages, or high magnetic fields.