Novel Lithography Stages Fabricated from High Performance Composite Materials

Not Available Innovative device designs and novel growth and fabrication techniques will be investigated to provide a significant improvement in the operational characteristics of A1GaN/GaN high electron mobility transistors (HEMTS). Three novel GaN-based HEMT structures based on the strain control of the heterostructure interface will be investigated for successful demonstration of high power HEMTs in this material system. Comparison between traditional impurity doping vs. piezoelectric doping for three different GaN based HEMT structures will be evaluated. Significant reduction of dislocation density in A1GaN/GaN heterostructures by employing novel techniques of lateral epitaxial overgrowth (LEO) will be investigated with respect to the device performance. The factors limiting performance of advanced A1GaN/GaN LEO-based will be analyzed for further optimization of the devices. III-Nitride based HEMT structures will be optimized to produce materials with improved mobility and uniformity over multiple substrates in a commercially GaN production reactor. Various means of exploiting the advantages of LEO, including the use of buried FET gates in the dielectric mask for novel electrical designs as well as improved thermal performance will be explored. A strategic pairing between Northrop Grumman and EMCORE Corporation will ensure both the technical and commercial success of the proposed work.