Organoerbium Source Reagents for MOCVD of Erbium-Containing Alloys

The use of optoelectronic materials, such as gallium arsenide, in applications ranging from fiber optics to solid-state lasers has been growing rapidly. The fabrication of these materials requires exacting control over material composition, purity, uniformity and production rate. Typically these materials contain small amounts of rare earth dopants or impurities which are designated to enhance the optoelectronic effect. Advanced Technology Materials, Inc. has designed novel precursors for these rare earth dopants. These new "source reagents" should facilitate the manufacturing process by increasing the efficiency of incorporation of dopants into optoelectronic materials effectively reducing cost and increasing quality at the same time.