SBIR/STTR Research Award

Novel Use of Gas Jet Plasma to Prepare Amorphous Silicon Alloy

Award identifier b9cba809938085db6d5b1f992cbf612c617517b9cd093d8ef058cac663f5d248Awarding agency Department of Energy

Award amount

$750,000

Program and phase

SBIR · Phase II

Award year

1997

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Award details

Awarding agency
Department of Energy
Branch
Not reported
Recipient company
ENERGY CONVERSION DEVICES, INC.
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

41405 November 20, 1996 Energy Conversion Devices, Inc. This project will investigate the feasibility of using a gas jet plasma technique to produce silicon films for solar cells. The technique has been used to prepare high quality silicon films at rates 20 times faster than those typically used for preparing silicon film solar cells. With these faster rates and the associated higher gas utilization, application of this technique to an existing roll-to-roll solar cell production process would lead to significant cost savings. Furthermore, indications are that the high electron temperatures associated with this technique produce materials with different microstructures which are less susceptible to degradation. Phase I will produce and characterize materials prepared using this new technique, fabricate solar cells to demonstrate the advantages of using this technology, and demonstrate that solar cell production costs can be lowered by utilizing this technology. Commercial Applications and Other Benefits as described by the awardee: The production of solar cells with higher stable efficiencies at lower production costs is anticipated. As a result, photovoltaic modules would be used more widely, reducing the dependency on fossil fuel driven energy.

Technology keywords

Not reported

Agency intelligence

Department of Energy

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