SBIR/STTR Research Award
N-TYPE, HIGHLY TETRAHEDRAL AMORPHOUS CARBON FIELD EMITTERS FOR FLAT PANEL DISPLAYS
Award amount
$59,921Program and phase
SBIR · Phase IAward year
1994Award details
- Awarding agency
- Department of Defense
- Branch
- Missile Defense Agency
- Recipient company
- Implant Sciences Corporation
- Proposal award date
- Not reported
- Contract end date
- Not reported
- UEI
- Not reported
- Solicitation number
- Not reported
- Topic code
- Not reported
Research abstract
Implant Sciences Corporation (ISC) proposes a 6-month, Phase I program to evaluate phosphorus doped tetrahedral amorphous carbon (ta-C) as thin film field emitters for large area, flat panel displays. Deposition of carbon by the energetic filtered cathodic arc process produces material unlike any other allotrope of carbon. ta-C is non-hydrogenated, exhibits high sp3 bonding (up to 90%), and has a density (3.26g/cc) and hardness (95 GPa) approaching those of diamond. Films of ta-C should not be confused with either DLC films or amorphic diamond films. Their properties are quite inferior to ta-C. Doping of ta-C is done during film growth; the source of phosphorus is a graphite phosphorus cathode used in the arc deposition process.
Technology keywords
Not reported