SBIR/STTR Research Award

N-TYPE, HIGHLY TETRAHEDRAL AMORPHOUS CARBON FIELD EMITTERS FOR FLAT PANEL DISPLAYS

Award identifier 8940e327e6899e51eab6e296f9b84cc15f6245625e11d396250ff847a06c0e9aAwarding agency Department of Defense · Missile Defense Agency

Award amount

$59,921

Program and phase

SBIR · Phase I

Award year

1994

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Award details

Awarding agency
Department of Defense
Branch
Missile Defense Agency
Recipient company
Implant Sciences Corporation
Proposal award date
Not reported
Contract end date
Not reported
UEI
Not reported
Solicitation number
Not reported
Topic code
Not reported

Research abstract

Implant Sciences Corporation (ISC) proposes a 6-month, Phase I program to evaluate phosphorus doped tetrahedral amorphous carbon (ta-C) as thin film field emitters for large area, flat panel displays. Deposition of carbon by the energetic filtered cathodic arc process produces material unlike any other allotrope of carbon. ta-C is non-hydrogenated, exhibits high sp3 bonding (up to 90%), and has a density (3.26g/cc) and hardness (95 GPa) approaching those of diamond. Films of ta-C should not be confused with either DLC films or amorphic diamond films. Their properties are quite inferior to ta-C. Doping of ta-C is done during film growth; the source of phosphorus is a graphite phosphorus cathode used in the arc deposition process.

Technology keywords

Not reported

Agency intelligence

Department of Defense

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