High Power Linear Arrays of 1.9um Laser Diodes

The broadened waveguide (BW) concept has yielded record output powers for quantum well lasers between 0.8 and 1.55 um. The imporvement is attributed to larger mode size and lower optical loss from free-carrier absorption in the quantum wells and cladding regions. We propose to demonstrate high power single aperture InGaAsP/InP laser diodes at 1.9 um and to fabricate linear-arrays with substantially higher powers than available today. During Phase I we will use gas-source moleculear beam epitaxy (GSMBE) to grow loss-loss, high efficiency, BW laser structures. The thickness and bandgap of the waveguide layer will be optimized for low internal loss, low threshold current and high internal efficiency. High power 200 um aperture single and a 1x5 linear array will be delivered. In Phase II, BW lasers with strain compensated active regions, will be fabricated. These designs will reduce the temperature sensitivity, increase the wavelength to 2 um and yield higher powers. Linear arrays with high-efficiency, temperature insensitive lasers will be fabricated. Prof. S.R. Forrest and Chris Dreis of Princeton University will consult.